Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

作者：Hu Bo; Huang Shi Hua^*; Wu Feng Min

来源：Chinese Physics B, 2013, 22(1): 017301.

DOI：10.1088/1674-1056/22/1/017301

• tunneling current
• ultrathin oxide
• interface trap charge
• fixed oxide charge

A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si-SiO2 interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 10(12) cm(-2), which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.

• 出版日期2013-1
• 单位浙江师范大学