A novel GCSCR structure for ESD protection Application

作者：Zhao Liu^*; Liu Jizhi; Chen Hui; Tian Rui; Liu Zhiwei

来源：7th IEEE International Nanoelectronics Conference, 2016-05-09 to 2016-05-11.

• Electrostatic discharge(ESD)
• low trigger voltage
• silicon-controlled rectifier(SCR)
• gate-couple technique

A novel gate-coupled silicon-controlled rectifier (GCSCR) device is proposed and realized in a 0.35-um BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the GCSCR has a trigger voltage as low as 9 V to effectively protect deep-submicrometer MOS circuits. The ESD robustness of the novel SCR in positive operations are higher than 60mA/um, thus the new device is more suitable for low-voltage integrated circuit ESD protection applications.

• 出版日期2016
• 单位电子科技大学