摘要

Trimethylgallium is adopted as a metal organic precursor to develop GaN, which is a basis for power source, and LED with regard to metal organic chemical vapor deposition. After use, however, about 10% of the total usage of TMGa remains within the canister, and thus this study aims to develop the collection and refinement process through which the remaining amount can be reused. The TMGa storage canister used in the TMGa LED process is collected and transferred to the storage canister for refinement, and it turns out that the amount of recovery is more than 98%. In addition, the result of analyzing the impurity content of TMGa after the refinement process shows that the content of the entire impurities is 0.1 ppm, which is lower than 10-100 ppm, the figure of existing impurities that commercial TMGa may contain. In the NMR analysis of defective chemical bonding of TMGa or (CH3)(3)Ga, clear (CH3)(3)Ga peak is observed with no defective structure of bonding.

  • 出版日期2013-2-15

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