SiyGe1-x-ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

作者：Mosleh Aboozar^*; Alher Murtadha; Du Wei; Cousar Larry C; Ghetmiri Seyed Amir; Al Kabi Sattar; Dou Wei; Grant Perry C; Sun Greg; Soref Richard A; Li Baohua; Naseem Hameed A; Yu Shui Qing

来源：Journal of Vacuum Science and Technology B, 2016, 34(1): 011201.

DOI：10.1116/1.4936892

Silicon germanium tin alloys were grown directly on Si substrates using a cold-wall ultrahigh-vacuum chemical vapor deposition system at 300 degrees C, where commercially available precursors of silane, germane, and stannic chloride were used to grow the epitaxial layers. The crystallinity and growth quality of the SiyGe1-x-ySnx films were investigated through material characterization methods including x-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectroscopy, and transmission electron microscopy. Rutherford backscattering measurements show that 2%-5% of the Sn and 3%-5% of the Si were successfully incorporated. Investigation of the material growth parameters shows that a flow rate of stannic chloride higher than 1 sccm results in etching of the film, while an increase in the silane flow rate results in amorphous film growth. The photoluminescence study shows clear emission peaks ascribed to direct and indirect bandgap transitions, which are in agreement with theoretical calculations.

• 出版日期2016-2