High Efficiency and ESD of GaN-Based LEDs With Patterned Ion-Damaged Current Blocking Layer

作者：Lee Keon Hwa; Moon Yong Tae; Oh Seung Kyu; Kwak Joon Seop^*

来源：IEEE Photonics Technology Letters, 2015, 27(2): 149-152.

DOI：10.1109/LPT.2014.2362982

• Light-emitting diode
• current blocking layer
• electrostatic discharge

This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-angstrom-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the dot patterns are regularly arranged over the active areas of the light-emitting diode (LED) and inserted beneath the p-electrode. The results showed that the light output power increased by 16.8% at 60 mA compared with the conventional LEDs, and that the electrostatic discharge resistance is effectively improved by the patterned-IDCBL.

• 出版日期2015-1-15