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摘要
Metal-semiconductor-metal varactor diodes were realized on the 2-D electron gas (2DEG) of an In0.7Ga0.3As HEMT structure. The electrical performances, such as capacitance switching ratio (C-max/C-min) and cutoff frequency (f(o)), were determined by using S-parameters measurements up to 40 GHz. Devices with 130-nm gate length and a gate distance of 2 mu m exhibited a cutoff frequency (f(o)) of 908 GHz and a capacitance switching ratio of 1.4. The corresponding figure of merit, which is defined as f(o).C-max/C-min, was 1.29 THz.
- 出版日期2014-2
