An All-SiC High-Frequency Boost DC-DC Converter Operating at 320 degrees C Junction Temperature

作者：Zhong, Xueqian; Wu, Xinke^*; Zhou, Weicheng; Sheng, Kuang

来源：IEEE Transactions on Power Electronics, 2014, 29(10): 5091-5096.

DOI：10.1109/TPEL.2014.2311800

• Boost converter
• high frequency
• high temperature
• junction temperature
• silicon carbide (SiC)

This letter presents the design, prototype development, operation, and testing of an 800 kHz, 1 kW, 800 V output boost dc-dc converter module that integrates SiC MOSFET and SiC Schottky diode die. It is observed that when the device loss is dominated by switching loss, the steady-state junction temperature of SiC MOSFET can reach as high as 320 degrees C. This is the highest self-heated junction temperature operation of SiC power devices under room temperature ambient reported in the literature. The high-frequency switching characteristics and high-temperature thermal reliability of the assessed converter are evaluated in detail. A solder-molten phenomenon during high junction temperature operation is detected and the die-attachment material is thus improved to enhance the high-temperature thermal reliability of the converter module. This study shows that the high-frequency capability of a gate driver and high-temperature die-attachment technology can be limiting factors preventing SiC power devices from operating at higher junction temperatures.

• 出版日期2014-10
• 单位浙江大学