A memristor-based pixel implementing light-to-resistance conversion

作者：Olumodeji Olufemi A^*; Bramanti Alessandro P; Gottardi Massimo; Iannotta Salvatore

来源：Optical Engineering, 2016, 55(2): 020501.

DOI：10.1117/1.OE.55.2.020501

• image sensors
• light
• architecture
• modulators

This letter reports a pixel architecture that implements a light-to-resistance encoder exploiting the properties of a memristor. A light-to-frequency (L2F) converter is adopted to drive a memristor with pulses, thus changing its resistance according with the light intensity. In a conventional L2F implementation, a binary counter is needed to store the number of pulses generated within the exposure time (T-i). In the proposed circuit, the binary counter has been replaced with an analog counterpart, made of a single memristor. This turns into a smaller pixel pitch, compared with an all-CMOS solution and analog nonvolatile characteristics. The proposed circuit has been simulated in a 3.3 V, 0.35 mu m CMOS process, while the memristor behavior relies on the HP model.

• 出版日期2016-2