AlGaN/GaN hybrid MOS-HEMT analytical mobility model

作者：Perez Tomas A^*; Fontsere A

来源：Solid-State Electronics, 2011, 56(1): 201-206.

DOI：10.1016/j.sse.2010.11.016

• GaN
• AlGaN
• Hybrid MOS-HEMT
• MOSFET
• HEMT
• Model
• On-resistance

Since it is naturally normally-off, the hybrid AlGaN/GaN MOS-HEMT has a tremendous potential for an advanced GaN-based power switch. An analytical model for the hybrid AlGaN/GaN HEMT on-resistance is presented in this paper. The methodology presented here can aid the designers to understand the physics and to electrically characterize the new generation of GaN based devices. The models proposed here can also easily be implemented in TCAD simulation packages where models for GaN devices are not mature.

• 出版日期2011-2