An Eight-Element 370-410-GHz Phased-Array Transmitter in 45-nm CMOS SOI With Peak EIRP of 8-8.5 dBm

作者：Yang Yang^*; Gurbuz Ozan Dogan; Rebeiz Gabriel M

来源：IEEE Transactions on Microwave Theory and Techniques, 2016, 64(12): 4241-4249.

DOI：10.1109/TMTT.2016.2613850

• CMOS silicon on insulator (SOI)
• phased array
• quadrupler
• quartz
• terahertz (THz)
• W-band amplifier
• W-band vector modulator

This paper presents a 370-410-GHz phased-array transmitter, which is based on a W-band distribution network, amplifiers, and vector modulators, feeding a linear eight-element quadrupler array. The quadrupler outputs are connected to high-efficiency microstrip antennas. The design is scalable to a large number of elements, since most of the chip operates at W-band frequencies. The chip is built using 45-nm CMOS silicon on insulator technology, which offers transistors with f(t) and f(max) of 250-260 GHz referenced to the top metal. The phased array results an equivalent isotropic radiated power (EIRP) of >5 dBm at 375-405 dBm with a peak EIRP of 7-8.5 dBm at 380-400 GHz and with a pattern scan of +/-35 degrees in one plane. To the best of our knowledge, this is one of the first demonstrations of a phased array operating at 400 GHz using CMOS technology and with wide operating bandwidth.

• 出版日期2016-12