科研之友
微信
新浪微博
Facebook
分享链接
摘要
The architecture for generating a nano-ampere proportional to absolute temperature (PTAT) current source is proposed. The circuit has been designed and fabricated in a standard 180 nm CMOS technology. Measurements were performed on 10 prototypes in the temperature range of -40 to + 85 degrees C. The operating supply voltage of the proposed circuit is 850 mV +/- 10%. The measured averaged temperature inaccuracy and the linearity of the proposed architecture is between + 0.86/-0.93 degrees C and + 0.69/-0.75%, respectively.
- 出版日期2015-1-8
