Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

作者：Gomolka E.; Markowska O.; Kopytko M.; Kowalewski A.; Martyniuk P.; Rogalski A.; Rutkowsk J.; Motyka M.; Krishna S.

来源：Bulletin of the Polish Academy of Sciences-Technical Sciences, 2018, 66(3): 317-323.

DOI：10.24425/123438

• InAs/GaSb type-II superlattices
• infrared detectors
• barrier detectors
• p-i-n detector
• nBn detector

We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 mu m at 80 K and increase of up to 5.6 mu m at 290 K was found. Values of Varshni parameters, zero temperature bandgap E-0 and empirical coefficients alpha and beta were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.

• 出版日期2018-6