A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-mu m 5-V CMOS Process

作者：Huang Yu Ching^*; Ker Ming Dou

来源：IEEE Electron Device Letters, 2013, 34(5): 674-676.

DOI：10.1109/LED.2013.2252456

• Electrostatic discharges (ESD)
• latchup
• silicon-controlled rectifier (SCR)

Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-mu m 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.

• 出版日期2013-5