科研之友
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摘要
Thin ZnO films were directly grown on p-Si(1 0 0) substrates by photoinduced electrodeposition under illumination. In this case, p-Si wafer behaves as a photocathode. At the initial deposition stage, it has been found that the ZnO films grew through three-dimensional instantaneous nucleation followed by diffusion-limited growth mode. In this study, we report that the conductivity type of ZnO films can be changed from n-type to p-type by varying the relative concentration of oxygen in ZnO films through the thermal treatment in air ambient without any doping process. The electrical properties of ZnO/p-Si heterojunctions were investigated via current-voltage (I-V) characteristics. These heterojunctions showed good diode-like, rectifying I-V characteristics and the turn-on voltages of the n-ZnO/p-Si and p-ZnO/p-Si heterojunctions were found to be 0.56 and 0.46 V. From the analysis of temperature dependence of the I-V characteristics, these heterojunctions exhibited that the charge carriers are mainly transported by the activation of the carriers across the barrier height but in a low voltage region under forward bias, transported through the multi-step tunnelling-assisted carrier capture-emission mechanism.
- 出版日期2010-9-15
