摘要

Near-infrared photosensitive organic field-effect transistors (PhOFETs) based on pentacene/erbium phthalocyanine (ErPc2) and copper phthalocyanine (CuPc)/ErPc2 heterojunction, as well as ErPc2 single layer PhOFETs, were fabricated and characterized. The results showed that the heterojunction PhOFETs exhibit higher mobility, maximum photoresponsivity (R-max) and maximum photo/dark current ratio (P-max), comparing with the ErPc2 single-layer ones. Such a better performance of the heterojunction devices can be attributed to the higher mobility channel layer. And the pentacene/ErPc2 PhOFETs demonstrate an R-max of 6498 mA/W, P-max of 2.6 x 10(3), hole mobility of 1.5 x 10(-2) cm(2) V-1 s(-1) and excellent air stability, its R-max is 186 times larger than that of the ErPc2 single-layer PhOFETs. Therefore, ErPc2 can be used as an excellent NIR photoresponsive layer of heterojunction PhOFETs.