作者：La Torre Camilla; Kindsmueller Andreas; Wouters Dirk J; Graves Catherine E; Gibson Gary A; Strachan John Paul; Williams R Stanley; Waser Rainer; Menzel Stephan
来源：Nanoscale, 2017, 9(38): 14414-14422.
DOI：10.1039/c7nr04896c
摘要
A volatile effect in non-volatile ReRAM memories that leads to a current asymmetry and the occurrence of subloops is presented.
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