Aligned carbon nanotube stacks by water-assisted selective etching

作者:Zhu LB; Xiu YH; Hess DW*; Wong CP
来源:Nano Letters, 2005, 5(12): 2641-2645.
DOI:10.1021/nl051906b

摘要

Well-aligned, high-purity carbon nanotube (CNT) stacks of up to 10 layers fabricated in one batch process have been formed by water-assisted selective etching of carbon atoms. Etching takes place at the CNT caps as well as at the interface between CNTs and metal catalyst particles. This simple process generates high-purity CNTs and opens the CNT ends by removing the nanotube caps. High-resolution transmission electron microscopy indicates that the process does not damage CNT wall structures. A mechanism for stacked growth of CNT layers is proposed.

  • 出版日期2005-12