An extensive study of the influence of dopants on the ferroelectric properties of HfO2

作者:Starschich S; Boettger U
来源:Journal of Materials Chemistry C, 2017, 5(2): 333-338.
DOI:10.1039/c6tc04807b

摘要

The ferroelectric properties of hafnium oxide based thin films prepared by chemical solution deposition (CSD) are investigated.

  • 出版日期2017-1-14