A semiconductor-nanowire assembly of ultrahigh junction density by the Langmuir-Blodgett technique

作者：Acharya S; Panda AB; Belman N; Efrima S; Golan Y^*

来源：Advanced Materials, 2006, 18(2): 210-+.

DOI：10.1002/adma.200501234

The assembly of ultrathin ZnSe nanowires over large areas (see figure) is achieved by a Langmuir-Blodgett technique in a single step with uniform registry, and without any further secondary technique for alignment. Ultrahigh packing density of junctions, exceeding over 60 x 10(3) mu m(-2) is achieved by subsequent deposition of a second two-dimensional nanowire assembly with a controlled angle between the two layers. The resulting network notably surpasses the limit of conventional fabrication techniques.

• 出版日期2006-1-19