Short channel effect improved strained-Si : C-source/drain PMOSFETs

作者：Lee M H^*; Chang S T; Maikap S; Shen K W; Wang W C

来源：Applied Surface Science, 2008, 254(19): 6144-6146.

DOI：10.1016/j.apsusc.2008.02.178

• strained-Si : C
• short channel effect
• retardation

The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (> 900 degrees C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

• 出版日期2008-7-30
• 单位长春大学