A novel technique for stress gradient measurement of electrostatic MEM switches and non ideal anchor's effects

作者：Rezazadeh Ghader^*; Sadeghian Hamed; Zubtsov Mikhail

来源：Analog Integrated Circuits and Signal Processing, 2010, 62(1): 43-50.

DOI：10.1007/s10470-009-9319-5

• MEMS
• Stress gradient
• Pull-in voltage
• GDQM

The residual stress in a polysilicon beam varies throughout its thickness and will cause a freestanding cantilever to curl upwards or downwards. Measurement of stress gradient for cantilever beam MEMS switches was studied by new procedure and its influences on pull-in phenomena of cantilever beam type were studied. The effect of non ideal anchors of fixed-fixed end type MEM switches were investigated in. The Generalized Differential Quadrature Method was used as a high order approximation to discretize the governing nonlinear differential equation yielding more accurate results with a considerably smaller number of grid points. Further, the results obtained were compared with other existing empirical and theoretical models.

• 出版日期2010-1