科研之友
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摘要
Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (M-t) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 x 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 k Omega to 1 M Omega with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.
- 出版日期2015-7
