Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

作者：Chen Yu Sheng^*; Lee Heng Yuan; Chen Pang Shiu; Chen Wei Su; Tsai Kan Hsueh; Gu Pei Yi; Wu Tai Yuan; Tsai Chen Han; Rahaman S Z; Lin Yu De; Chen Frederick; Tsai Ming Jinn; Ku Tzu Kun

来源：IEEE Electron Device Letters, 2014, 35(2): 202-204.

DOI：10.1109/LED.2013.2294375

• Defects-trapping
• nonlinearity
• RRAM
• self-compliance

The dependence of resistive switching of Ta/TaOX/HfOX device governed by general filamentary or novel defects-trapping mechanism on the operation current is demonstrated in this letter. The device with stable resistive switching, high nonlinearity, and robust self-compliance similar to 1 mu A is demonstrated, which can be integrated in the vertical RRAM structure. Based on constant current density switching (similar to 10(3) A/cm(2)) governed by defects-trapping transport, where the low and high resistance states attributed to the resistance of Ta/TaOX layer and device initial state, the switching current reduction by scaling down the cell size is proposed in transition metal oxide RRAM.

• 出版日期2014-2