Nanowire-based resistive switching memories: devices, operation and scaling

作者：Ielmini, D.^*; Cagli, C.; Nardi, F.; Zhang, Y.

来源：Journal of Physics D: Applied Physics , 2013, 46(7): 074006.

DOI：10.1088/0022-3727/46/7/074006

• CORE-SHELL
• NONVOLATILE MEMORY
• NANOFILAMENTS
• MECHANISMS
• ELEMENTS
• DIODES
• ARRAYS
• LOGIC

Nanowires (NWs) represent a logical pathway to extreme scaling of semiconductor devices in the single-digit nanometer scale. Combined with the inherent scalability of the resistive switching memory (RRAM), where the switching region consists of a conductive filament as small as a single atom, NWs may provide an ideal approach to reduce the device area to a range not accessible to conventional lithography. This work reviews NW-based RRAM (NWRRAM) devices. The different approaches to NWRRAMs, including (i) switching in a single metal-oxide NW, (ii) switching in a heterostructured NW with a metal-oxide segment sandwiched between NW metallic electrodes and (iii) switching in a core-shell NW, are discussed. The latter approach is then presented in detail, covering the assembly issues, the robust switching and reliability characteristics, and the scaling outlook.

• 出版日期2013-2-20