Low-resistance contacts of electroless-plated metals with high-mobility organic semiconductors: Novel organic field-effect transistors with solution-processed electrodes

作者：Ito M^*; Uno M; Takeya J

来源：Organic Electronics, 2015, 27: 53-58.

DOI：10.1016/j.orgel.2015.08.025

• Plating
• Organic transistor
• Contact electrodes
• Contact resistance
• Top contact

The establishment of a reliable vacuum-free method for the formation of electrical contacts on highperformance organic semiconductors has become an urgent task due to rapid progress made in the development of solution-processable high-mobility organic field-effect transistors (OFETs). We have recently proposed that electroless plating, a standard technology to mass produce wirings in currently commercialized electronic devices, is suited for high-performance solution-crystallized OFETs. A low contact resistance at the source and drain electrodes is necessary with organic semiconductors for highspeed device operation; therefore, we have evaluated the contact resistance using the transfer line method. A top-contact geometry with sufficient contact area is employed to achieve stable carrier injection, which has enabled contact resistances as low as 1.4 k Omega cm on a polyethylene naphthalate substrate at a gate voltage of -10 V. This marks outstanding performance among the solution-processed metal electrodes reported for OFETs, particularly on plastic substrates. The result indicates that highquality boundaries with minimized trap densities are realized due to the mild conditions of the electroless plating process at room temperature.

• 出版日期2015-12