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摘要
Using examples of some perspective electronic materials (HgSeS, Fe3O4, InN, and others) it is shown that magnetoresistance data at high magnetic fields allow evaluating the true values of mobility of charge carriers in spite of any %26quot;adverse factors%26quot;. Additional impacts involving high pressure and irradiation with high-energy particles (neutrons, electrons, ions) produce the enhancement of magnetoresistance technique of testing and allow to go into details of the type of electron structure and scattering mechanisms of charge carriers.
- 出版日期2012-9
