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摘要
In this letter, an organic nonvolatile thin film transistor (TFT) memory on a plastic substrate is reported. The cross-linked poly-4-vinyl phenol (PVP) is used as a polymer dielectric layer in the form of a triple layer structure to achieve the memory function. Two interfaces between the PVP triple layers are the main trapping centers for electrons and holes, respectively, which are verified by the capacitance-voltage analysis. The electric dipole is established by the separated electrons and holes in the two interfaces of the PVP triple layer structure and results in an 11 V memory window for the TFT nonvolatile memory.
- 出版日期2008-10-6
- 单位中央民族大学
