A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

作者：Fang Xiang; Lin Chia Ho; Sun Yung Tai; Chin Huei Tzu; Zan Hsiao Wen^*; Meng Hsin Fei^*; Horng Sheng Fu; Wang Lon A^*

来源：Organic Electronics, 2016, 31: 227-233.

DOI：10.1016/j.orgel.2016.01.027

• Nanoimprint lithography
• Vertical
• Organic transistor
• P3HT
• Lift-off

A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5).

• 出版日期2016-4
• 单位中国科学院电工研究所; 清华大学