A metal-semiconductor composite model for the linear magnetoresistance in high magnetic field

作者：Xu Jie; Zhang Duanming^*; Yang Fengxia; Li Zhihua; Deng Zongwei; Pan Yuan

来源：Physica B: Condensed Matter , 2008, 403(21-22): 4000-4005.

DOI：10.1016/j.physb.2008.07.042

• Linear magnetoresistance
• Silver metal
• Silver selenide (telluride) semiconductor
• Composite

A model for the linear magnetoresistance (MR) in high magnetic field is proposed by considering silver-rich Ag(2+delta)Se and Ag(2+delta)Te materials as two-phase (silver metal phase and semiconductor phase) composites. The model takes the MR as a function of magnetic field, temperature and the conductivity of the two phases without magnetic field. The model predictions are in good agreement with the available experimental data. It is inferred from the model that there is a critical volume fraction of silver metal phase, at which the MR reaches a maximum value. The values of the critical volume fraction of the silver metal phase are about 0.2 and 0.05 for the Ag(2+delta)Te thin film and Ag(2+delta)Se bulk, respectively. We interpret the occurrence of the critical volume fraction as a result of the percolation between silver particles in the material.

• 出版日期2008-11-30
• 单位华中科技大学