MEMORY PERSISTENCY: SEMANTICS FOR BYTE-ADDRESSABLE NONVOLATILE MEMORY TECHNOLOGIES

作者：Pelley Steven; Chen Peter M; Wenisch Thomas F^*

来源：IEEE Micro, 2015, 35(3): 125-131.

DOI：10.1109/mm.2015.46

IMPLEMENTING CORRECT RECOVERABLE DATA STRUCTURES REQUIRES CONSTRAINTS ON THE ORDER OF WRITES. THIS ARTICLE INTRODUCES MEMORY PERSISTENCY, A FRAMEWORK FOR ALLOWING PROGRAMMERS TO EXPRESS MINIMAL ORDERING CONSTRAINTS ON WRITES TO BYTE-ADDRESSABLE NONVOLATILE MEMORY (NVRAM). BY ENABLING HIGHER NVRAM WRITE CONCURRENCY, RELAXED PERSISTENCY MODELS CAN ACCELERATE SYSTEM THROUGHPUT 30 TIMES.

• 出版日期2015-6