Universal distribution of optically excited carriers in tetrahedral amorphous semiconductors

作者：Taylor PC^*; Schultz NA; Yan B; Efros AL

来源：Journal of Non-Crystalline Solids, 2002, 299: 300-304.

DOI：10.1016/S0022-3093(01)01170-X

The decay of optically excited electrons and holes in tetrahedrally coordinated amorphous semiconductors is a universal property of these amorphous solids [Phys. Rev. Lett. 84 (2000) 4180]. The experimental measurements employ a seldom-used electron spin resonance (ESR) detection technique that surpasses the sensitivity of previous measurements by several orders of magnitude. This technique employs second harmonic detection (SH-ESR) of the ESR. Measurements have been performed over a wide range of excitation intensities (nW/cm(2) to W/cm(2)) on hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous germanium (a-Ge:H). Using the SH-ESR technique, the kinetics can be studied down to saturated carrier densities as low as approximately 10(14) cm(-3). In addition to the longtime decay curves. both the saturated densities of carriers after long-time irradiation and the most probable recombination lifetimes for the optically excited carriers in a-Si:H agree well with models for the universal diffusion and recombination of carriers at lov,, temperatures. Similar results are obtained for samples of a-Ge:H with germanium kdangling-bond densities less than or similar to 10(17) cm(-3). A comparison of the ESR lineshapes for the electrons and holes trapped in the conduction and valence band tails. respectively, with electrons and holes trapped in a divacancy in crystalline silicon shows that the asymmetries and localizations of the wavefunctions are similar in both cases.

• 出版日期2002-4-1