A Performance-Aware MOSFET Threshold Voltage Measurement Circuit in a 65-nm CMOS

作者：Wang Dong^*; Tan Xiao Liang^*; Chan Pak Kwong^*

来源：IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2016, 24(4): 1430-1440.

DOI：10.1109/TVLSI.2015.2465841

• Nonlinear temperature compensation
• power supply rejection (PSR) enhancement
• threshold voltage (V-TH) circuit
• voltage reference

This paper presents a new performance-aware nanometer-scale MOSFET threshold voltage (V-TH) measurement circuit that employs dual-segment nonlinear temperature compensation on the Brokaw circuit topology. Besides, a preregulator feedback control loop is used to enhance the power supply rejection (PSR) of the circuit. Fabricated in a UMC 65-nm CMOS process, it consumes 2.64 mu W at 1.1 V supply. The measured results indicated that the VTH measurement circuit achieves an average temperature coefficient (TC) of 28.7 ppm/degrees C over 15 samples in a temperature range of -30 degrees C to 80 degrees C. PSRs of -54.5 dB at 100 Hz and -43.5 dB at 10 MHz are obtained without any output filtering capacitor. The average reference voltage is 470.3 mV, which is close to the extrapolated VTH for a low-threshold nMOS transistor at absolute zero.

• 出版日期2016-4
• 单位南阳理工学院