The Importance of Ballistic Resistance in the Modeling of Nanoscale InGaAs MOSFETs

作者：Lin Jianqiang^*; Cai Xiaowei; Antoniadis Dimitri A; del Alamo Jesus A

来源：IEEE Electron Device Letters, 2017, 38(7): 851-854.

DOI：10.1109/LED.2017.2700385

• III-V
• quantum-well MOSFETs
• ballistic mobility
• ballistic resistance
• near-equilibrium transport

Physics-based transistor models are important for technology projections and circuit simulations. To date, there has been little discussion on the incorporation of ballistic effects in transistor models. Recent experimental studies have revealed the significance of ballistic transport in the electrical characteristics of nanometer-scale InGaAs MOSFETs with ultra-low external resistance. Without proper accounting for the ballistic resistance and its gate voltage dependence, the access resistance to the intrinsic device cannot be accurately determined, and any physics-based transistor modeling is bound to fail. In this letter, we show that the MIT Virtual Source model, which natively captures ballistic transport physics, correctly incorporates the impact of ballistic resistance. As a result, it accurately models the electrical characteristics of self-aligned nanoscale InGaAs MOSFETs, an excellent model system for near-ballistic transistors, over a broad operational range. We also show that the success of the model development effort crucially relies on the correct extraction of the external source and drain resistance, R-sd, from experimental measurements.

• 出版日期2017-7
• 单位MIT