Abnormal pressure-induced structural transformations of gallium nitride nanowires

作者：Dong Zhaohui; Song Yang^*

来源：Applied Physics Letters, 2010, 96(15): 151903.

DOI：10.1063/1.3394009

• gallium compounds
• high-pressure solid-state phase transformations
• III-V semiconductors
• nanowires
• semiconductor quantum wires
• wide band gap semiconductors
• X-ray diffraction

One-dimensional nanostructured GaN was studied at pressures up to 65 GPa by in situ synchrotron x-ray diffraction. A wurtzite-to-rocksalt transformation was observed at similar to 55 GPa, an onset pressure higher than that for bulk GaN, but lower than that for nanocrystalline GaN. Such transformation was found extremely incomplete even at the highest pressure but was facilitated by decompression. In addition, GaN nanowires exhibited drastically different volume responses to compression than did GaN in other forms. These unusual pressure behaviors of GaN nanowires are attributed to the interplay of several factors involving the intrinsic nanoproperties and the compression conditions.

• 出版日期2010-4-12