Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

作者：Boratto Miguel H; Congiu Mirko; dos Santos Stevan B O; Scalvi Luis V A

来源：Ceramics International, 2018, 44(9): 10790-10796.

DOI：10.1016/j.ceramint.2018.03.117

• ZrO 2
• Dielectric
• Annealing effect
• Sol-gel

Abstract(#br)A study of zirconium oxide (ZrO 2 ) thin films obtained by the non-alkoxide sol-gel method at different annealing temperatures, up to 450 °C, is presented. Morphological, compositional, and optical characterizations of zirconia thin films show high transparency and high bandgap, besides...

• 出版日期2018-6-15