All evaporation submicron lift-off lithography process with negative e-beam QSR-5 resist

作者：Gerbedoen Jean Claude^*; Aliane Abdelkader; Giguere Alexandre; Drouin Dominique; Ares Richard; Aimez Vincent

来源：Microelectronic Engineering, 2013, 103: 123-125.

DOI：10.1016/j.mee.2012.10.006

• Bilayer lift-off process
• Evaporated resist
• ebeam lithography
• Photodetector

We present a bilayer lift-off process without spin coating step, based on evaporated negative ebeam resist QSR-5. This technique is appropriated to process small samples of a few millimetres in size. Evaporated amorphous silicon was used to create the undercut. Patterns were defined by electron beam lithography thanks to the high resolution QSR-5 resist. We optimized the undercut of the a-Si layer using a high density plasma etching system with different recipes to allow submicron lines lift-off. Lift-off with no edge bead effect was performed using this technique. Finally, the process was applied to demonstrate the fabrication of Metal/Semiconductor/Metal (MSM) photodetector on a millimetre scale substrate.

• 出版日期2013-3