A novel mode of current switching dependent on activated charge transport

作者：Britton David T^*; Walton Stanley D; Zambou Serges; Magunje Batsirai; Jonah Emmanuel O; Haerting Margit

来源：AIP Advances, 2013, 3(8): 082110.

DOI：10.1063/1.4818275

We demonstrate a fully printed transistor with a planar triode geometry, using nanoparticulate silicon as the semiconductor material, which has a unique mode of operation as an electrically controlled two-way (double throw) switch. A signal applied to the base changes the direction of the current from between the collector and base to between the base and emitter. We further show that the switching characteristic results from the activated charge transport in the semiconductor material, and that it is independent of the dominant carrier type in the semiconductor and the nature of the junction between the semiconductor and the three contacts. The same equivalent circuit, and hence similar device characteristics, can be produced using any other material combination with non-linear current-voltage characteristics, such as a suitable combination of semiconducting and conducting materials, such that a Schottky junction is present at all three contacts.

• 出版日期2013-8