A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

作者：Makimoto Toshiki^*; Kumakura Kazuhide; Kobayashi Yasuyuki; Akasaka Tetsuya; Yamamoto Hideki

来源：Applied Physics Express, 2012, 5(7): 072102.

DOI：10.1143/APEX.5.072102

We have successfully released an InGaN/GaN light-emitting diode (LED) from a sapphire growth substrate and transferred it to a piece of commercially available adhesive tape using a mechanical transfer method called "MeTRe'' (Mechanical Transfer using a Release layer). By this method, a 3-nm-thick hexagonal BN (h-BN) layer inserted between the sapphire substrate and the GaN-based layer acts as both a buffer layer for the growth of a high-quality GaN-based layer and a release layer in the transfer process. A very thin (<0.1 mm) vertical LED prototype wrapped with two pieces of adhesive tape emitted violet-blue light.

• 出版日期2012-7