New Micromachining Technique for Unworkable Sapphire by Highly Coalesced Ion Implantation and Eximer Laser Irradiation

作者：Ishiyama Shintaro^*; Ohba Hironori; Yamamoto Syunya; Shobu Takahisa

来源：Kagaku Kogaku Ronbunshu, 2014, 40(2): 131-136.

DOI：10.1252/kakoronbunshu.40.131

• Microprocessing
• Quantum Beam Coalesced Technology
• Ion Doping
• ArF Laser
• Sapphire

It was found that 0.3-3 MeV H-2(+) -implanted sapphire exhibits singular optical absorption of ultraviolet light at a wavelength of about 200 nm. Using this property, a new micromachining technique for unworkable sapphire was demonstrated by using highly coalesced ion implantation and eximer laser irradiation. When sapphire implanted with 0.3 MeV H-2(+) up to 1.3x10(17) ions/cm(2) was irradiated with ArF laser at 3.4 J/cm(2) in a single shot, a rectangular microgroove of 1 mu m in depth, 80 mu m in width and 7 mm in length was observed on the surface of the ion-implanted sapphire. However, with implantation of over 1.3x10(17) ions/cm(2), remarkable blistering was observed on the surface of the sapphire.

• 出版日期2014