An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers

作者：Govoreanu B^*; Blomme P; Henson K; Van Houdt J; De Meyer K

来源：Solid-State Electronics, 2004, 48(4): 617-625.

DOI：10.1016/j.sse.2003.09.031

• tunneling current
• inversion layer
• quasibound state lifetime
• high-k dielectrics
• gate dielectric scalability

In this paper, a model for describing tunneling from Si inversion layers is discussed. The model accounts for the quantization effects at the silicon/dielectric interface and is able to closely follow the self-consistent calculation of the potential and inversion charge in an inverted MOS structure. It is also applicable to multilayer gate stacks, since a general procedure is used for calculating the transmission through dielectric stacks. Influence of both material and geometrical parameters of a dual layer stack are discussed and scaling projections are inferred.

• 出版日期2004-4