A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

作者：Sung Woongje^*; Baliga B J

来源：IEEE Transactions on Electron Devices, 2017, 64(4): 1647-1652.

DOI：10.1109/TED.2017.2664051

• 4H-Silicon Carbide (4H-SiC)
• edge termination
• floating field ring (FFR)
• guard ring
• JTE
• junction termination extension (JTE)
• silicon carbide

This paper compares five edge termination techniques for SiC high-voltage devices: single zone junction termination extension (JTE), ring assisted-JTE (RA-JTE), multiple floating zone-JTE, hybrid-JTE, and floating field rings. PiN diodes with these edge terminations were fabricated on a 4.5kV-rated 4H-silicon carbide (4H-SiC) epi-layer. It was experimentally demonstrated that the Hybrid-JTE provides a nearly ideal breakdown voltage (99% of the ideal parallel plane breakdown voltage) with a stable avalanche blocking behavior. RA-JTE, with tight control of the JTE implant dose, is demonstrated to be the most area-efficient edge termination structure for SiC power devices.

• 出版日期2017-4