摘要

High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch. In this study, the RSD turn-on conditions were investigated by numerical analysis and device simulation as well as the experiments conducted to validate the turn-on conditions. A design of a triggering high-voltage RSD is presented based on a saturable transformer.