Analytical Low Frequency NBTI Compact Modeling with H-2 Locking and Electron Fast Capture and Emission

作者：Qing, J.; Zeng, Y.; Li, X. J.^*; Zhang, P. J.; Sun, Y. B.^*; Shi, Y. L.

来源：Journal of Electronic Testing-Theory and Applications, 2018, 34(5): 599-605.

DOI：10.1007/s10836-018-5751-8

• Negative bias temperature instability (NBTI)
• Low frequency
• Reaction diffusion (RD)
• Fast electron capture
• emission
• H-2 locking effect

Besides reaction-diffusion theory explaining the generation and passivation of interface trap (N-IT), hole trapping/de-trapping in preexisting gate insulator traps and transient charge occupancy in N-IT are also combined to describe the characteristic of NBTI degradation. However, it is found that H-2 locking effect and Electron Fast Capture/Emission play key roles in the NBTI degradation. In this paper, an analytical low frequency AC NBTI compact model has been proposed to accurately predict the shift in threshold voltage. Two fitting parameters ( and F-FAST) have been introduced to account for the H-2 locking and fast electron capture and emission. The comparison between the proposed model and the experimental data has been carried out, and the results show that our proposed can catch the kinetics of NBTI degradation under low frequency AC stress conditions.

• 出版日期2018-10
• 单位华东师范大学