N-Type Superconductivity in an Organic Mott Insulator Induced by Light-Driven Electron-Doping

作者：Suda Masayuki^*; Takashina Naoto; Namuangruk Supawadee; Kungwan Nawee; Sakurai Hidehiro; Yamamoto Hiroshi M^*

来源：Advanced Materials, 2017, 29(33): 1606833.

DOI：10.1002/adma.201606833

• field-effect transistors
• Mott insulators
• photochromism
• superconductivity

The presence of interface dipoles in self-assembled monolayers (SAMs) gives rise to electric-field effects at the device interfaces. SAMs of spiropyran derivatives can be used as photoactive interface dipole layer in field-effect transistors because the photochromism of spiropyrans involves a large dipole moment switching. Recently, light-induced p-type superconductivity in an organic Mott insulator, kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br (kappa-Br: BEDT-TTF = bis(ethylenedithio) tetrathiafulvalene) has been realized, thanks to the hole carriers induced by significant interface dipole variation in the spiropyran-SAM. This report explores the converse situation by designing a new type of spiropyran monolayer in which light-induced electron-doping into kappa-Br and accompanying n-type superconducting transition have been observed. These results open new possibilities for novel electronics utilizing a photoactive SAMs, which can design not only the magnitude but also the direction of photoinduced electric-fields at the device interfaces.

• 出版日期2017-9-6