All ink-jet-printed carbon nanotube thin-film transistor on a polyimide substrate with an ultrahigh operating frequency of over 5 GHz

作者：Vaillancourt Jarrod^*; Zhang Haiyan; Vasinajindakaw Puminun; Xia Haitao; Lu Xuejun; Han Xuliang; Janzen Daniel C; Shih Wu Sheng; Jones Carissa S; Stroder Mike; Chen Maggie Yihong; Subbaraman Harish; Chen Ray T; Berger Urs; Renn Mike

来源：Applied Physics Letters, 2008, 93(24): 243301.

DOI：10.1063/1.3043682

• carbon nanotubes
• photolithography
• thin film transistors

We report a flexible carbon nanotube (CNT) thin-film transistor (TFT) fabricated solely by ink-jet printing technology. The TFT is top gate configured, consisting of source and drain electrodes, a carrier transport layer based on an ultrapure, high-density (>1000 CNTs/mu m(2)) CNT thin film, an ion-gel gate dielectric layer, and a poly(3,4-ethylenedioxythiophene) top gate electrode. All the TFT elements are ink-jet printed at room temperature on a polyimide substrate without involving any photolithography patterning or surface pretreatment steps. This CNT-TFT exhibits a high operating frequency of over 5 GHz and an on-off ratio of over 100. Such an all-ink-jet-printed process eliminates the need for lithography, vacuum processing, and metallization procedures and thus provides a promising technology for low-cost, high-throughput fabrication of large-area high-speed flexible electronic circuits on virtually any desired flexible substrate.

• 出版日期2008-12-15