Analytical modeling and analysis of Al (m) Ga1-m N/GaN HEMTs employing both field-plate and high-k dielectric stack for high-voltage operation

作者：Kaddeche Mourad^*; Telia Azzedine; Soltani Ali

来源：Journal of Computational Electronics, 2013, 12(3): 501-510.

DOI：10.1007/s10825-013-0468-5

• AlGaN/GaN heterostructure
• GCFPS-HEMTs
• High-k dielectric
• Field-plate (FP)

In this paper, a new high-voltage Al (m) Ga1-m N/GaN HEMT (High Electron Mobility Transistors) with Field-Plate and high-k dielectric stack, Graded two-dimensional electron gas (2DEG) Channel Field-Plate Stack dielectric (GCFPS) HEMTs structure has been reported. The proposed structure has shown enhancements of the performances of the GaN-based HEMTs taking into account the effects of spontaneous and piezoelectric polarization fields. In order to analyze this structure, a 2D analytical model has been developed where the expressions for 2D channel potential and electric field distribution have been derived. It was shown that the GCFPS design exhibits significantly reduction of the electric field peaks along the 2DEG channel. Therefore, the breakdown voltage (BV) is greatly improved in comparison with the standard AlGaN/GaN FP-HEMTs. The developed model is validated by the good agreement with the 2D simulated data.

• 出版日期2013-9