摘要

Highly c-oriented ZnO films were prepared on ZnO buffer-coated ITO substrate by a solution method at 80 degrees C. The effects of precursor concentration and growth time on the morphology of the films were investigated. The structure, morphology were characterized by using X-ray diffraction, transmission electron microscope, scanning electron microscope, field emission scanning electron microscope. The results show that the morphology of ZnO films is strongly dependent on the precursor concentration and growth time, all the ZnO rods belong to the hexagonal wurtzite structure. The growth manner of ZnO is layer by layer. Special lath-like crystals formed by secondary growth when growth time was 48h.