Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

作者：Singh Pragya; Simanjuntak Firman Mangasa; Kumar Amit; Tseng Tseung Yuen^*

来源：Thin Solid Films, 2018, 660: 828-833.

DOI：10.1016/j.tsf.2018.03.027

• Resistive switching
• Nanorods
• Gallium
• Zinc oxide
• Conductive-bridge random-access memory
• Chemical solution deposition

The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 10(4) s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

• 出版日期2018-8-30