摘要

A micro-crack in a single-crystal silicon was investigated using a high-resolution transmission electron microscopy. In particular, geometric phase analysis and numerical moire method were employed to analyze the deformation fields of this crack-tip. The strain field maps of the crack-tip Indeed show that the deformation can only occur at the crack-tip area The maxima of the strain components, namely, epsilon(xx), epsilon(yy), and epsilon(xy) at the crack-tip area can reach 1.47%, 2.91%, and 2.47%, respectively.