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摘要
The Sr0.95Ba0.05TiO3 (SBT) memristor is prepared using the monolayer Sr0.95Ba0.05TiO3 nanofilm structure. In order to apply it into the nonlinear circuit design, the SBT memristor is modeled in the paper. The voltage-controlled physical model of the SBT memristor is established based on its working mechanism. Due to the difficulty in determining the accurate parameters of the voltage-controlled physical model, a flux-controlled mathematical model of the SBT memristor is proposed, and its equivalence relation with the voltage-controlled physical model is proved. Moreover, the parameters of the flux-controlled mathematical model are determined by means of the quadratic polynomial interpolation method using the experimentally measured voltage and current data of the SBT memristor. The simulated u-i characteristic curve using the flux-controlled mathematical model coincides well with the measured u-i characteristic curves. The result indicates that the flux-controlled mathematical model with the definite parameters can be used to characterize the behaviors of the physical SBT memristor and guide its application to nonlinear circuit design.
- 出版日期2017-8
- 单位山东科技大学
